Taiwan Memory Technology Inc.

256k x 16 EDO DRAM
Product ID: T224162B

256k x 16 EDO DRAM

The T224162B is a randomly accessed solid state memory containing 4,194,304 bits organized in a x 16 configuration. The T224162B has both BYTE WRITE and WORD WRITE access cycles via two CAS pins. It offers Fast Page mode with Extended Data Output.
The T224162B CAS function and timing are determined by the first CAS to transition low and by the last to transition back high. Use only one of the two CAS and leave the other staying high during WRITE will result in a BYTE WRITE. CASL transiting low in a WRITE cycle will write data into the lower byte(IO1~IO8), and CASH transiting low will write data into the upper byte(IO9~16).

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