Taiwan Memory Technology Inc.

4M x 4 EDO/FPM DRAM
Product ID: T2316402A

4M x 4 EDO/FPM DRAM

The T2316402A is randomly accessed solid state memory containing 16,777,216 bits organized in a x 4 configuration. It offers Fast Page mode with Extended Data Output (EDO).
During READ or WRITE cycles, each of the 4 memory bits (1 bit per I/O) is uniquely addressed through the 22 address bits, which are entered 11 bits (A0-A10) at a time. RAS latches the first 11 bits and CAS latches the latter 11 bits.
A READ or WRITE cycle is selected with the WE input. A logic HIGH on WE dictates READ.

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