The Taiwan Memory Technology Synchronous Burst RAM family employs: high-speed, low power CMOS design using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors.
The T36L6432A SRAM integrates 65536 x 32 SRAM cells with advanced synchronous peripheral circuitry and 2-bit counter for internal burst.
Features:
- Fast Access times: 4.5, 5, 6, 7 and 8ns
- Fast clock speed: 125, 100, 83, 66 and 50MHz
- Provide high performance 3-1-1-1 access rate
- Fast OE access times: 4.5, 5 and 6ns
- +3.3V +0.35V / -0.15V power supply (Vcc)
- Separate +2.5V +0.4V / -0.125V isolated output buffer supply(VccQ)
- Vcc and VccQ can be no special power sequencing constraints
- Common data inputs and data outputs
- BYTE WRITE ENABLE and GLOBAL WRITE control
- Three chip enables for depth expansion and address pipelining
- Address, control, input, and output pipelined registers
- Internally self-times WRITE cycle
- WRITE pass-through capability
- Burst control pins (interleaved or linear burst sequence)
- High density, high speed packages
- Low capacitive bus loading
- High 30pF output drive capability at rated access time
- SNOOZE MODE for reduced power standby
- Single cycle disable (Pentium^TM BSRAM compatible)
- Automatic power-down for portable applications
Ordering information:
- Minimum Order: Negotiable