The Schottky Barrier Diode is different from the P/N silicon diode. Normal (P/N) diodes is formed by combining P-type and N-type semiconductors together in close contact. Schottky barrier diodes are constructed from metal to form a semiconductor contact.
As the metal and semiconductor are brought together, a layer of potential barrier (Schottky Barrier) is formed on the connecting surface which has shown the identity of rectification. The Schottky Barrier Diode is the majority carrier device while the normal diode is the minority carrier device. The Schottky Barrier Diode does not suffer from minority carrier storage problems since it can turn to circuit breakage in a very short time. The reverse recovery time Trr of the Schottky Barrier Diode is shorter than 10nS which is faster than any p-n junction diode.
They also tend to have much lower junction capacitance than with P/N diodes. The forward voltage bias of the Schottky Barrier Diode is under 0.6 V, it is much lower than normal diodes (about 1.1 V). It is an ideal diode such as with an ampere limited current PN interface.
Specifications:
- Plant automation, Personal computers, Monitors, Printers, Hard discs, Fax machines, Exchangers.
- Security equipment, Alarm systems, Radios, Inverters, Alternative changers, Battery chargers.
- Various types of motors, Mixed integrated circuits, CD ROMs, Scanners, Modems, HVAC, Translators.
- DC-DC current transformers, AC-DC current transformers, Vehicle hi-fi sets, Digital cameras, CDs.
- Wireless telephones, Mobile phones, Sphygmomanometers, Electronic games, Electric razors.
Features:
- Small Signal Schottky Barrier Diodes
- Schottky Barrier Diodes
- Low VF Schottky Barrier Diodes
- General Purpose Rectifiers
- Fast Recovery Rectifiers
- High Efficiency Rectifiers
- Super Fast Rectifiers
- TVS (Transient Voltage Suppressors)
Ordering information:
- Minimum Order: Negotiable